CHA8012-99F


Stock Availability: 0

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8012-99F
Richardson RFPD #: CHA8012-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 25/1
Datasheet CHA8012-99F/00 Data Sheet
EDA/CAD Models

C Band High Power Amplifier GaAs Monolithic Microwave IC. CHA8012-99F is a monolithic two-stage GaAs High Power Amplifier (HPA) designed for C band applications. The HPA provides typically 12W of output power on the 5.2 to 6.0GHz frequency band associated with 43% of power added efficiency at 3dB gain compression. The small signal gain is 22dB. The overall power supply is of 8V/2.1A. The circuit is dedicated to defense and space applications and is also well suited for a wide range of microwave and millimeter wave applications and systems. The device is manufactured using 0.25um Power pHEMT process, including via holes through the substrate and air bridges. It is available in chip form.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 5200
Maximum Frequency (MHz) 6000
Gain (dB) 22
Gain Flatness (dB)
Efficiency (%)
Supply Voltage (V) 8
P1dB (dBm)
Psat (W)
PAvg (W)
Package Type Chip

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