CHA8054-99F

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CHA8054-99F/00 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8054-99F
Richardson RFPD #: CHA8054-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 25/1
Datasheet CHA8054-99F/00 Data Sheet
EDA/CAD Models

The CHA8054-99F is a two stage High Power Amplifier operating between 7.7 and 8.6GHz and typically providing 20W of saturated output power and 50% of Power Added Efficiency. It is designed for a wide range of applications, from space, military to commercial communication systems. The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography .It is available in chip form.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 7700
Maximum Frequency (MHz) 8600
Gain (dB) 27
Gain Flatness (dB)
Efficiency (%) 50
Supply Voltage (V) 28
P1dB (dBm)
Psat (W) 20
PAvg (W)
Package Type Die

Datasheets

  CHA8054-99F

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 Pricing in (USD)
Unit Price:
25:  $585.0600
50:  $506.4600
100:  Get Quote


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