The CHA8100 chip is a monolithic two stage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output. Moreover it includes: an analogue biasing circuit that makes it less sensitive to spread and chip environment, an integrated TTL interface that enables to switch the HPA with a current consumption lower than 1mA. The circuit is 100% DC and RF tested on wafer to ensure performance compliance. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges.
