CHA8107-QCB/20
Stock Availability: 0
| Manufacturer: | United Monolithic Semiconductors |
|---|---|
| Mfg #: | CHA8107-QCB/20 |
| Richardson RFPD #: | CHA8107-QCB/20 |
| Description: | RF & MW Power Amplifier |
| Min/Mult: | 73/1 |
| Datasheet |
CHA8107-QCB/20 |
| EDA/CAD Models |
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The CHA8107-QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band. This HPA operates with a drain voltage from 14V to 24V. Depending on the applied drain voltage, this HPA provides between 8W and 20W of saturated output power associated with 58% Power Added Efficiency on average across the frequency band.
Designed for Radar application, it is also ideal for a wide range of microwave systems. The product is developed on a robust GaN-on-SiC HEMT process with humidity protection and is available in a QFN plastic package.
Datasheets
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