CHA8107-QCB/20


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8107-QCB/20
Richardson RFPD #: CHA8107-QCB/20
Description: RF & MW Power Amplifier
Min/Mult: 73/1
Datasheet CHA8107-QCB/20 Data Sheet
EDA/CAD Models

The CHA8107-QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band. This HPA operates with a drain voltage from 14V to 24V. Depending on the applied drain voltage, this HPA provides between 8W and 20W of saturated output power associated with 58% Power Added Efficiency on average across the frequency band.

Designed for Radar application, it is also ideal for a wide range of microwave systems. The product is developed on a robust GaN-on-SiC HEMT process with humidity protection and is available in a QFN plastic package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 4500
Maximum Frequency (MHz) 6800
Gain (dB) 28
Gain Flatness (dB)
Efficiency (%) 62
Supply Voltage (V) 18
P1dB (dBm)
Psat (W) 20
PAvg (W)
Package Type QFN

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