CHA8212-99F
Stock Availability: 0
| Manufacturer: | United Monolithic Semiconductors |
|---|---|
| Mfg #: | CHA8212-99F |
| Richardson RFPD #: | CHA8212-99F |
| Description: | RF & MW Power Amplifier |
| Min/Mult: | 1 |
| Datasheet |
CHA8212-99F 
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| EDA/CAD Models |
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The CHA8212-99F is a three-stage GaN High Power Amplifier in the frequency band 8.5-11.5GHz. This HPA typically provides 25W of output power associated to 36% of Power Added Efficiency. The small signal gain exhibits more than 30dB. The overall power supply is of 28V/0.84A (quiescent current). This circuit is a very versatile amplifier for high performance systems. The circuit is dedicated to defence applications and well suited for a wide range of microwave applications and systems. The part is developed on a robust 0.25µm gate length GaN HEMT process and is available as a bare die.
Datasheets
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