CHA8212-99F

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CHA8212-99F/00 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8212-99F
Richardson RFPD #: CHA8212-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 25/1
Datasheet CHA8212-99F/00 Data Sheet
EDA/CAD Models

The CHA8212-99F is a three-stage GaN High Power Amplifier in the frequency band 8.5-11.5GHz. This HPA typically provides 25W of output power associated to 36% of Power Added Efficiency. The small signal gain exhibits more than 30dB. The overall power supply is of 28V/0.84A (quiescent current). This circuit is a very versatile amplifier for high performance systems. The circuit is dedicated to defence applications and well suited for a wide range of microwave applications and systems. The part is developed on a robust 0.25µm gate length GaN HEMT process and is available as a bare die.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 8500
Maximum Frequency (MHz) 11500
Gain (dB) 34
Gain Flatness (dB)
Efficiency (%) 36
Supply Voltage (V) 28
P1dB (dBm)
Psat (W) 25
PAvg (W)
Package Type Die

Datasheets

  CHA8212-99F

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Unit Price:
25:  $637.3100
50:  Get Quote


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