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Product image for reference only. For precise specifications, refer to datasheet.
The CHA8252-99F is a three-stage GaN High Power Amplifier in the frequency band 17.3‑20.3GHz. This HPA typically provides 10W of output power associated to 35% of Power Added Efficiency. The small signal gain exhibits more than 31dB. The overall power supply is 18V/0.3A (quiescent current). The circuit is dedicated to space applications and well suited for a wide range of microwave applications and systems. The part is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is available as a bare die.
CHA8252-99F
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