CHA8252-99F


Stock Availability: 7

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer:
Mfg #: CHA8252-99F
Richardson RFPD #: CHA8252-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet CHA8252-99F/00 Data Sheet
EDA/CAD Models

The CHA8252-99F is a three-stage GaN High Power Amplifier in the frequency band 17.3‑20.3GHz. This HPA typically provides 10W of output power associated to 35% of Power Added Efficiency. The small signal gain exhibits more than 31dB. The overall power supply is 18V/0.3A (quiescent current). The circuit is dedicated to space applications and well suited for a wide range of microwave applications and systems. The part is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is available as a bare die.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 17300
Maximum Frequency (MHz) 20300
Gain (dB) 31
Gain Flatness (dB)
Efficiency (%) 35
Supply Voltage (V) 18
P1dB (dBm)
Psat (W) 10
PAvg (W)
Package Type Die

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Stock: 7 Units

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1:  $313.1000