CHA8254-99F
Stock Availability: 0
| Manufacturer: | United Monolithic Semiconductors |
|---|---|
| Mfg #: | CHA8254-99F |
| Richardson RFPD #: | CHA8254-99F |
| Description: | RF & MW Power Amplifier |
| Min/Mult: | 25/25 |
| Datasheet |
CHA8254-99F 
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| EDA/CAD Models |
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The CHA8254-99F is a three-stage GaN Doherty Power Amplifier in the frequency band 17.3-20.3GHz. This DPA typically provides 10W of output power associated to 31% of Power Added Efficiency. Thanks to Doherty architecture, it also provides 27% Power Added Efficiency at 6dB of input back-off. The small signal gain reaches more than 29dB. The overall power supply is 15V/210mA (quiescent current). Due to a low drain voltage biasing, the CHA8254-99F provides a junction temperature below 160°C even in saturation. This circuit is a very versatile amplifier for high performance systems.
The circuit is firstly dedicated to space applications and well suited for a wide range of microwave applications and systems. The part is developed on a robust GaN on SiC HEMT process and is available as a bare die.
| Other Attributes | Value |
|---|---|
| Configuration | High Side / Low Side |
| Maximum Operating Temperature (°C) | 125 |
| Input Type | PWM |
| Minimum Operating Temperature (°C) | -40 |
| Package Type | WB SOIC16 |
| Propagation Delay (ns) | 30 |
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