CHA8254-99F


Stock Availability: 0

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8254-99F
Richardson RFPD #: CHA8254-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 25/1
Datasheet CHA8254-99F/00 Data Sheet
EDA/CAD Models

The CHA8254-99F is a three-stage GaN Doherty Power Amplifier in the frequency band 17.3-20.3GHz. This DPA typically provides 10W of output power associated to 31% of Power Added Efficiency. Thanks to Doherty architecture, it also provides 27% Power Added Efficiency at 6dB of input back-off. The small signal gain reaches more than 29dB. The overall power supply is 15V/210mA (quiescent current). Due to a low drain voltage biasing, the CHA8254-99F provides a junction temperature below 160°C even in saturation. This circuit is a very versatile amplifier for high performance systems.

The circuit is firstly dedicated to space applications and well suited for a wide range of microwave applications and systems. The part is developed on a robust GaN on SiC HEMT process and is available as a bare die.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 17300
Maximum Frequency (MHz) 20300
Gain (dB) 29
Gain Flatness (dB)
Efficiency (%) 27
Supply Voltage (V) 15
P1dB (dBm)
Psat (W) 10
PAvg (W)
Package Type Die

Datasheets

Stock

Request Quote for Lead Time

Order

Pricing in (USD)

Unit Price:
25:  $356.1200
50:  $308.2800
100:  Get Quote


Please notify me when stock becomes available!