CHA8262-99F


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8262-99F
Richardson RFPD #: CHA8262-99F
Description: mmW Power Amplifier
Min/Mult: 1
EDA/CAD Models

The CHA8262-99F is a three stage monolithic GaN High Power Amplifier reaching 12W Output Power over 27.5-31.5GHz bandwidth.

It offers high linearity performances and reaches more than 25% of Power Added Efficiency at saturation. The circuit is manufactured on a 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.

It is well suited for SatCom uplink and 5G communication applications.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 27500
Maximum Frequency (MHz) 31500
Gain (dB) 24
Gain Flatness (dB)
Noise Figure (dB)
P1dB (dBm)
Psat (dBm) 41
Output IP3 (dBm)
Efficiency (%) 25
Package Type Die

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