CHA8262-99F

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CHA8262-99F/00 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8262-99F
Richardson RFPD #: CHA8262-99F/00
Description: mmW Power Amplifier
Min/Mult: 25/1
Datasheet CHA8262-99F/00 Data Sheet
EDA/CAD Models

The CHA8262-99F is a three stage monolithic GaN High Power Amplifier reaching 12W Output Power over 27.5-31.5GHz bandwidth.

It offers high linearity performances and reaches more than 25% of Power Added Efficiency at saturation. The circuit is manufactured on a 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.

It is well suited for SatCom uplink and 5G communication applications.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 27500
Maximum Frequency (MHz) 31500
Gain (dB) 24
Gain Flatness (dB)
Noise Figure (dB)
P1dB (dBm)
Psat (dBm) 41
Output IP3 (dBm)
Efficiency (%) 25
Package Type Die

Datasheets

  CHA8262-99F

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 Pricing in (USD)
Unit Price:
25:  $418.4600
50:  $372.7500
100:  Get Quote


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