CHA8312-99F
Stock Availability: 0
| Manufacturer: | United Monolithic Semiconductors |
|---|---|
| Mfg #: | CHA8312-99F |
| Richardson RFPD #: | CHA8312-99F |
| Description: | RF & MW Power Amplifier |
| Min/Mult: | 1 |
| Datasheet |
CHA8312-99F 
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| EDA/CAD Models |
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The CHA8312-99F is a two-stage GaN High Power Amplifier in the frequency band 8-12GHz. This HPA typically provides 17W of output power associated to 50% of Power Added Efficiency. The small signal gain exhibits more than 26dB. The overall power supply is of 20V / 320mA (quiescent current).
This circuit is a very versatile amplifier for high performance systems. The circuit is dedicated to defence applications and well suited for a wide range of microwave applications and systems such as radar, test equipment and communication. The part is developed on a robust 0.15µm gate length GaN HEMT process over SiC and is available as a bare die.
Datasheets
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