CHA8312-99F


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8312-99F
Richardson RFPD #: CHA8312-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 25/1
Datasheet CHA8312-99F/00 Data Sheet
EDA/CAD Models

The CHA8312-99F is a two-stage GaN High Power Amplifier in the frequency band 8-12GHz. This HPA typically provides 17W of output power associated to 50% of Power Added Efficiency. The small signal gain exhibits more than 26dB. The overall power supply is of 20V / 320mA (quiescent current).

This circuit is a very versatile amplifier for high performance systems. The circuit is dedicated to defence applications and well suited for a wide range of microwave applications and systems such as radar, test equipment and communication. The part is developed on a robust 0.15µm gate length GaN HEMT process over SiC and is available as a bare die.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 8000
Maximum Frequency (MHz) 12000
Gain (dB) 26
Gain Flatness (dB)
Efficiency (%) 50
Supply Voltage (V) 20
P1dB (dBm)
Psat (W) 17.78
PAvg (W)
Package Type Die

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25:  $186.6100
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