CHA8352-99F
Stock Availability: 0
| Manufacturer: | United Monolithic Semiconductors |
|---|---|
| Mfg #: | CHA8352-99F |
| Richardson RFPD #: | CHA8352-99F |
| Description: | RF & MW Power Amplifier |
| Min/Mult: | 1 |
| Datasheet |
CHA8352-99F 
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| EDA/CAD Models |
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The CHA8352-99F is a two-stage GaN High Power Amplifier in the frequency band 10.7-12.75GHz. This HPA typically provides 20W of output power associated to 45% of Power Added Efficiency. The small signal gain exhibits more than 25dB. The overall power supply is of 20V/0.5A (quiescent current). The part is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is available as a bare die.
Datasheets
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