CHA8352-99F


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8352-99F
Richardson RFPD #: CHA8352-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 25/1
Datasheet CHA8352-99F/00 Data Sheet
EDA/CAD Models

The CHA8352-99F is a two-stage GaN High Power Amplifier in the frequency band 10.7-12.75GHz. This HPA typically provides 20W of output power associated to 45% of Power Added Efficiency. The small signal gain exhibits more than 25dB. The overall power supply is of 20V/0.5A (quiescent current). The part is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is available as a bare die.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 10700
Maximum Frequency (MHz) 12750
Gain (dB) 25
Gain Flatness (dB)
Efficiency (%) 45
Supply Voltage (V) 20
P1dB (dBm)
Psat (W) 20
PAvg (W)
Package Type Die

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Unit Price:
25:  $585.0600
50:  $506.4600
100:  Get Quote


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