CHA8362-99F/00


Stock Availability: 0

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8362-99F/00
Richardson RFPD #: CHA8362-99F/00
Description: mmW Power Amplifier
Min/Mult: 25/1
Datasheet CHA8362-99F/00 Data Sheet
EDA/CAD Models

The CHA8362-99F is a three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of power added efficiency. The typical power supply is 25V/440mA (quiescent current). The amplifier exhibits more than 25dB small signal gain. The CHA8362-99F has been optimized for Ka-Band satcom applications. The circuit is manufactured on a robust GaN-on-SiC HEMT process and is available in bare die form. The input and output are matched to 50 Ohm and the input integrates an ESD RF protection.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 26500
Maximum Frequency (MHz) 31000
Gain (dB) 25
Gain Flatness (dB)
Noise Figure (dB)
P1dB (dBm)
Psat (dBm) 44
Output IP3 (dBm)
Efficiency (%) 30
Package Type Die

Datasheets

Stock

Request Quote for Lead Time

Order

Pricing in (USD)

Unit Price:
25:  $774.1500
50:  $726.3500
100:  Get Quote


Please notify me when stock becomes available!