CHA8610-99F

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CHA8610-99F/00 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8610-99F
Richardson RFPD #: CHA8610-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 50/1
Datasheet CHA8610-99F/00 Data Sheet
EDA/CAD Models

15W X Band High Power Amplifier. The CHA8610-99F is a two stage High Power Amplifier operating between 8.5 and 11 GHz and providing typically 15W of saturated output power and 40% of power added efficiency. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 8500
Maximum Frequency (MHz) 11000
Gain (dB) 24
Gain Flatness (dB)
Efficiency (%) 40
Supply Voltage (V) 30
P1dB (dBm)
Psat (W) 15
PAvg (W)
Package Type Die

Datasheets

  CHA8610-99F

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50:  $261.2500
100:  Get Quote


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