CHA8611-99F

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CHA8611-99F/00 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8611-99F
Richardson RFPD #: CHA8611-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 50/1
Datasheet CHA8611-99F/00 Data Sheet
EDA/CAD Models

The CHA8611-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 18W of saturated output power and 43% of power added efficiency. The circuit is manufactured with a GaN pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 8500
Maximum Frequency (MHz) 11000
Gain (dB) 24
Gain Flatness (dB)
Efficiency (%) 43
Supply Voltage (V) 25
P1dB (dBm)
Psat (W) 18
PAvg (W)
Package Type Die

Datasheets

  CHA8611-99F

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50:  $261.2500
100:  Get Quote


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