CHA8612-QDB/20
Stock Availability: 37
| Manufacturer: | United Monolithic Semiconductors |
|---|---|
| Mfg #: | CHA8612-QDB/20 |
| Richardson RFPD #: | CHA8612-QDB/20 |
| Description: | RF & MW Power Amplifier |
| Min/Mult: | 52/1 |
| Datasheet |
CHA8612-QDB/20 
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| EDA/CAD Models |
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The CHA8612-QDB is a two stage High Power Amplifier operating between 7.9 and 11GHz and providing typically 18W of saturated output power and 40% of Power Added Efficiency.
It is designed for a wide range of applications, from military to commercial radar and communication systems.
The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.