CHA8612-QDB/20

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CHA8612-QDB/20 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8612-QDB/20
Richardson RFPD #: CHA8612-QDB/20
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet CHA8612-QDB/20 Data Sheet
EDA/CAD Models

The CHA8612-QDB is a two stage High Power Amplifier operating between 7.9 and 11GHz and providing typically 18W of saturated output power and 40% of Power Added Efficiency.

It is designed for a wide range of applications, from military to commercial radar and communication systems.

The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 7900
Maximum Frequency (MHz) 11000
Gain (dB) 26
Gain Flatness (dB)
Efficiency (%) 40
Supply Voltage (V) 30
P1dB (dBm) 42.5
Psat (W) 18
PAvg (W)
Package Type Plastic SMT

Change Notice

  UMS_PCN_2023_002

Datasheets

  CHA8612-QDB

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 Pricing in (USD)
Unit Price:
1:  $225.0000
25:  $204.9600
50:  $195.3800


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