CHA8618-99F

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CHA8618-99F/00 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8618-99F
Richardson RFPD #: CHA8618-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 25/1
Datasheet CHA8618-99F/00 Data Sheet
EDA/CAD Models

The CHA8618-99F is a monolithic GaN High Power Amplifier in the frequency band 6-18GHz with a control interface for fast switching. This power amplifier provides 42.5 dBm of saturated output power and small signal gain of 33dB. The overall power supply is of 20V/1.2A (quiescent current). It is designed for a wide range of applications, for military systems, such as electronic warfare, and test instrumentation. The part is manufactured on robust GaN HEMT technology and is available as a bare die.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 6000
Maximum Frequency (MHz) 18000
Gain (dB) 33
Gain Flatness (dB)
Efficiency (%)
Supply Voltage (V) 20
P1dB (dBm)
Psat (W) 17.78
PAvg (W)
Package Type Die

Datasheets

  CHA8618-99F

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 Pricing in (USD)
Unit Price:
25:  $553.0500
50:  $533.7000
100:  $509.1500
250:  $496.7000
500:  $448.0500


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