CHA8710-QDB/20

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CHA8710-QDB/20 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8710-QDB/20
Richardson RFPD #: CHA8710-QDB/20
Description: RF & MW Power Amplifier
Min/Mult: 52/1
Datasheet CHA8710-QDB/20 Data Sheet
EDA/CAD Models

The CHA8710-QDB is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 41% of power added efficiency. It is designed for a wide range of applications, from defense to commercial communication and radar systems. The circuit is manufactured with a robust GaN HEMT process, via holes through the substrate, air bridges and electron beam gate lithography.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 8500
Maximum Frequency (MHz) 10500
Gain (dB) 29.5
Gain Flatness (dB)
Efficiency (%) 41
Supply Voltage (V) 30
P1dB (dBm)
Psat (W) 25
PAvg (W)
Package Type QFN

Change Notice

  UMS_PCN_2023_002

Datasheets

  CHA8710-QDB

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