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Product image for reference only. For precise specifications, refer to datasheet.
The CHA8710a99F is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 44% of power added efficiency. The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
CHA8710A-99F
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