CHA8710A-99F/00

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CHA8710A-99F/00 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA8710A-99F/00
Richardson RFPD #: CHA8710A-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 25/1
Datasheet CHA8710A-99F/00 Data Sheet
EDA/CAD Models

The CHA8710a99F is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 44% of power added efficiency. The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 8500
Maximum Frequency (MHz) 10500
Gain (dB) 28.5
Gain Flatness (dB)
Efficiency (%) 44
Supply Voltage (V) 25
P1dB (dBm)
Psat (W) 25
PAvg (W)
Package Type Die

Datasheets

  CHA8710a99F

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 Pricing in (USD)
Unit Price:
25:  $597.3200
50:  $567.9700
100:  $499.4000
250:  Get Quote


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