CHK015AAQIA/20

The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication. The CHK015AaQIA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. It is proposed in low cost plastic package providing low parasitic and low thermal resistance.