CHK015AAQIA/20


Stock Availability: 175

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHK015AAQIA/20
Richardson RFPD #: CHK015AAQIA/20
Description: RF Power Transistor
Min/Mult: 1
Datasheet CHK015AAQIA/20 Data Sheet
EDA/CAD Models

The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication. The CHK015AaQIA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. It is proposed in low cost plastic package providing low parasitic and low thermal resistance.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 4000
Pout (W) 15
Gain (dB) 18
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 55
P1dB (W)
Psat (W) 20
Thermal Resistance (°C/W) 5
Package Name QFN
Package Type Plastic SMT

Change Notice
Datasheets

Stock

Ready for Immediate Shipment

Stock: 175 Units

Unit Price: Pricing in (USD)
1:  $42.4300
100:  $37.8700
500:  $33.3300
1000:  $29.3300
2500:  Get Quote