The CHK080A-SRA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunications.
The CHK080A-SRA is developed on a 0.5um gate length GaN HEMT process. It requires an external matching circuitry. The CHK080A-SRA is available in a ceramic-metal flange power package providing low parasitic and low thermal resistance.
Note: This part is only available to the extent of inventory
