CHK5010-99F/00

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CHK5010-99F/00 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHK5010-99F/00
Richardson RFPD #: CHK5010-99F/00
Description: RF Power Transistor
Min/Mult: 1
Datasheet CHK5010-99F/00 Data Sheet
EDA/CAD Models

The CHK5010-99F is a 4W GaN on SiC High Electron Mobility Transistor (HEMT). The CHK5010-99F offers a general purpose and broadband solution for a variety of RF power applications. The CHK5010-99F can be used up to 12 GHz in pulsed or CW operation.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 12000
Pout (W) 4
Gain (dB) 21.6
Supply Voltage (V) 30
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 72
P1dB (W)
Psat (W) 4
Thermal Resistance (°C/W) 15
Package Name
Package Type Die

Datasheets

  CHK5010-99F

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