CHK8013-99F

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CHK8013-99F/00 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHK8013-99F
Richardson RFPD #: CHK8013-99F/00
Description: RF Power Transistor
Min/Mult: 100/1
Datasheet CHK8013-99F/00 Data Sheet
EDA/CAD Models

The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor.

This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.

The circuit is manufactured on a 0.25 um gate length GaN HEMT technology on SiC substrate.

It is proposed in a bare die form and requires an external matching circuitry.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 10000
Pout (W) 14
Gain (dB) 17
Supply Voltage (V) 30
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 70
P1dB (W)
Psat (W) 14
Thermal Resistance (°C/W) 5.3
Package Name
Package Type Die

Datasheets

  CHK8013-99F Datasheet

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Unit Price:
100:  $51.6100
500:  Get Quote


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