CHK8015-99F

Stock Availability: 0

CHK8015-99F/00 United Monolithic Semiconductors
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHK8015-99F
Richardson RFPD #: CHK8015-99F/00
Description: RF Power Transistor
Min/Mult: 100/1
Datasheet CHK8015-99F/00 Data Sheet
EDA/CAD Models

The CHK8015-99F is a 16W Gallium Nitride on Silicon Carbide (GaN on SiC) High Electron Mobility Transistor (HEMT). This product offers a general purpose and broadband solution for a variety of RF power applications. The circuit is manufactured with a 0.25um gate length GaN on SiC process. Available in bare die format.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 18000
Pout (W) 16
Gain (dB) 17
Supply Voltage (V) 30
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 68
P1dB (W)
Psat (W) 20
Thermal Resistance (°C/W) 6
Package Name
Package Type Die

Datasheets

  CHK8015-99F

Stock

 Request Quote for Lead Time

Order

 Pricing in (USD)
Unit Price:
100:  $51.6100
500:  Get Quote


Please notify me when stock becomes available!