CHK8201-SYA

The CHK8201-SYA is an unmatched power bar microwave transistor, which integrates two CHK8101A-99F/00 power bars packaged together with individual access possible, that produces 45W of combined output power. The CHK8201-SYA is designed for a wide range of RF power applications up to 4 GHz. The CHK8201-SYA is well suited for multi-purpose applications such as radar and satcom. The applied GaN on SiC technology is a space evaluated GaN on SiC HEMT process with 0.50 µm gate length. The CHK8201-SYA is supplied in a hermetic ceramic-metal flange power package, compliant with the RoHs No 2011/65 and REACH No 1907/2006 directives.