CHKA011ASXA/26

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CHKA011A-SXA United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHKA011ASXA/26
Richardson RFPD #: CHKA011A-SXA
Description: RF Power Transistor
Min/Mult: 45/1
Datasheet CHKA011A-SXA Data Sheet
EDA/CAD Models

The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.

It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication.

The CHKA011aSXA is developed on a 0.5 um gate length GaN HEMT process. It requires an external matching circuitry.

It is proposed in ceramic metal flange power package, compliant with the RoHS N 2011/65 and REACH N1907/2006 directives.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 1500
Pout (W) 130
Gain (dB) 23.5
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 75
P1dB (W)
Psat (W) 150
Thermal Resistance (°C/W) 1.36
Package Name
Package Type Ceramic Flanged

Datasheets

  CHKA011ASXA

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 Pricing in (USD)
Unit Price:
45:  $467.2200
50:  $416.1800
100:  Get Quote


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