CHKA012A99F

The CHKA012a99F is a 140W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. It is proposed in a bare die form and requires an external matching circuitry.