CHKA012BSYA
Stock Availability: 0
| Manufacturer: | United Monolithic Semiconductors |
|---|---|
| Mfg #: | CHKA012BSYA |
| Richardson RFPD #: | CHKA012BSYA |
| Description: | RF Power Transistor |
| Min/Mult: | 1 |
| Datasheet |
CHKA012BSYA 
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| EDA/CAD Models |
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The CHKA012bSYA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. This power bar offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication. The CHKA012bSYA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. The CHKA012bSYA is supplied in an hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.
Datasheets
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