CHKA012BSYA

The CHKA012bSYA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. This power bar offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication. The CHKA012bSYA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. The CHKA012bSYA is supplied in an hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.