CHZ015AAQEG/20

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CHZ015AA-QEG/20 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHZ015AAQEG/20
Richardson RFPD #: CHZ015AA-QEG/20
Description: RF Power Transistor
Min/Mult: 73/1
Datasheet CHZ015AA-QEG/20 Data Sheet
EDA/CAD Models

The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor.

It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed radar application. The CHZ015A-QEG is proposed on a 0.5µm gate length GaN HEMT process. It is based on Quasi MMIC technology.

It is supplied in RoHS compliant SMD package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 1200
Maximum Frequency (MHz) 1400
Pout (W) 15
Gain (dB) 17.2
Supply Voltage (V) 45
50 Ohm Matching Input
Test signal Pulsed
Pulse Width 1000
Duty Cycle 10
Efficiency (%) 55
P1dB (W)
Psat (W) 18
Thermal Resistance (°C/W) 5
Package Name QFN
Package Type Plastic SMT

Change Notice

  UMS_PCN_2023_002

Datasheets

  CHZ015AaQEG

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