CHZ180AASEB

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CHZ180AA-SEB United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHZ180AASEB
Richardson RFPD #: CHZ180AA-SEB
Description: RF Power Transistor
Min/Mult: 25/1
Datasheet CHZ180AA-SEB Data Sheet
EDA/CAD Models

The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application. The CHZ180AaSEB is proposed on a 0.5µm gate length GaN HEMT process. It is based on Quasi-MMIC technology. It is available in a hermetic flange ceramic metal power package providing low parasitic and low thermal resistance.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 1200
Maximum Frequency (MHz) 1400
Pout (W) 200
Gain (dB) 20
Supply Voltage (V) 45
50 Ohm Matching Input
Test signal Pulsed
Pulse Width 100
Duty Cycle 10
Efficiency (%) 52
P1dB (W)
Psat (W) 200
Thermal Resistance (°C/W) 0.8
Package Name
Package Type Hermetic Metal/Ceramic

Datasheets

  CHZ180AA-SEB

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 Pricing in (USD)
Unit Price:
25:  $742.0500
50:  $661.0000
100:  Get Quote


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