CHZ8012-QJA/20

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CHZ8012-QJA United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHZ8012-QJA/20
Richardson RFPD #: CHZ8012-QJA
Description: RF Power Transistor
Min/Mult: 52/1
Datasheet CHZ8012-QJA Data Sheet
EDA/CAD Models

The CHZ8012-QJA is an S-Band Quasi-MMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. The CHZ8012-QJA is fully matched on 50 Ohms. It can be used following several operating conditions to meet system requirements. This product is dedicated to a wide range of applications, from military to commercial radar systems. The part is proposed in low cost plastic package providing low parasitic and low thermal resistance. It is supplied in RoHS compliant SMD package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2600
Maximum Frequency (MHz) 3400
Pout (W) 12
Gain (dB) 16.5
Supply Voltage (V) 26
50 Ohm Matching Input/Output
Test signal Pulsed
Pulse Width 400
Duty Cycle 15
Efficiency (%) 55
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 4.2
Package Name DFN
Package Type Plastic SMT

Datasheets

  CHZ8012-QJA

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52:  $70.1300
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