CMPA0060002F1


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CMPA0060002F1
Richardson RFPD #: CMPA0060002F1
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet CMPA0060002F1 Data Sheet
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CMPA0060002F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 6000
Gain (dB) 18
Gain Flatness (dB)
Efficiency (%) 26
Supply Voltage (V) 28
P1dB (dBm)
Psat (W) 4.6
PAvg (W)
Package Type Flanged

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