CMPA1D1E025F

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CMPA1D1E025F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CMPA1D1E025F
Richardson RFPD #: CMPA1D1E025F
Description: RF & MW Power Amplifier
Min/Mult: 10/10
Datasheet CMPA1D1E025F Data Sheet
EDA/CAD Models

CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 um gate length fabrication process. The Ku Band 25W MMIC is targeted for commercial Ku Band satellite communications applications. It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations. This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic flanged package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 13750
Maximum Frequency (MHz) 14500
Gain (dB) 24.5
Gain Flatness (dB)
Efficiency (%) 20
Supply Voltage (V) 40
P1dB (dBm)
Psat (W) 40
PAvg (W)
Package Type Flanged

Datasheets

  cmpa1d1e025f

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Unit Price: Pricing in (USD)
10:  $766.8600
20:  $682.5200
30:  $607.4400
40:  $525.8800
50:  $473.2800
60:  Get Quote

Must order in multiple of 10

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