CMPA2560025F


Stock Availability: 80

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CMPA2560025F
Richardson RFPD #: CMPA2560025F
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet CMPA2560025F Data Sheet
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CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a Copper-Tungsten heat-sink.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2500
Maximum Frequency (MHz) 6000
Gain (dB) 24.3
Gain Flatness (dB)
Efficiency (%) 32.8
Supply Voltage (V) 28
P1dB (dBm)
Psat (W) 37.5
PAvg (W)
Package Type Screw-down

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