CMPA2735075F1


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CMPA2735075F1
Richardson RFPD #: CMPA2735075F1
Description: RF & MW Power Amplifier
Min/Mult: 10/1
Datasheet CMPA2735075F1 Data Sheet
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CMPA2735075F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small footprint package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2700
Maximum Frequency (MHz) 3500
Gain (dB) 29
Gain Flatness (dB)
Efficiency (%) 54
Supply Voltage (V) 28
P1dB (dBm)
Psat (W) 80
PAvg (W)
Package Type Flanged

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