CMPA5259025F


Stock Availability: 22

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CMPA5259025F
Richardson RFPD #: CMPA5259025F
Description: RF & MW Power Amplifier
Min/Mult: 10/1
Datasheet CMPA5259025F Data Sheet
EDA/CAD Models

CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 5200
Maximum Frequency (MHz) 5900
Gain (dB) 31.9
Gain Flatness (dB)
Efficiency (%) 51.3
Supply Voltage (V) 28
P1dB (dBm)
Psat (W)
PAvg (W)
Package Type Flanged

Datasheets

Stock

Ready for Immediate Shipment

Stock: 22 Units

Order

Pricing in (USD)

Unit Price:
10:  $680.8300
25:  Get Quote