CMPA5259025S

CMPA5259025S is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide allowing the technology to offer greater power density and wider bandwidths compared to Si and GaAs devices. This MMIC uses a two-stage reactively matched amplifier design approach enabling wide bandwidths to be achieved in a small-footprint, while maintaining high gain and efficiency. Operating at 28 V, the 40 W pulsed output power is designed primarily for use as an output stage for highly integrated AESA radar type architectures. In addition the high gain makes it suitable as a drive stage for a multi-device line-up using the high power IMFETs as the final stage.