CMPA5259050F


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CMPA5259050F
Richardson RFPD #: CMPA5259050F
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet CMPA5259050F Data Sheet
EDA/CAD Models

CMPA5259050F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259050F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a 0.5 inch square ceramic/metal flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 5200
Maximum Frequency (MHz) 5900
Gain (dB) 30.8
Gain Flatness (dB)
Efficiency (%) 50.1
Supply Voltage (V) 28
P1dB (dBm)
Psat (W)
PAvg (W)
Package Type Flanged

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