CMPA901A035F
Stock Availability: 510
| Manufacturer: | MACOM Technology Solutions |
|---|---|
| Mfg #: | CMPA901A035F |
| Richardson RFPD #: | CMPA901A035F |
| Description: | RF & MW Power Amplifier |
| Min/Mult: | 1 |
| Datasheet |
CMPA901A035F 
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| EDA/CAD Models |
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The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 Ohms.
Datasheets