CMPA901A035F


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CMPA901A035F
Richardson RFPD #: CMPA901A035F
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet CMPA901A035F Data Sheet
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The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 Ohms.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 9000
Maximum Frequency (MHz) 11000
Gain (dB) 35
Gain Flatness (dB)
Efficiency (%) 42
Supply Voltage (V) 28
P1dB (dBm)
Psat (W)
PAvg (W)
Package Type Flanged

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