FEATURED Categories
FEATURED BRANDS
RFPD Services & Resources
Helpful Links
Product image for reference only. For precise specifications, refer to datasheet.
The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 Ohms.
cmpa901a035f
Order
Add to Quote Cart
Add to Parts List
Please notify me when stock becomes available!