DC35GN-15-Q4

Stock Availability: 0

DC35GN-15-Q4 Microchip
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: Microchip
Mfg #: DC35GN-15-Q4
Richardson RFPD #: DC35GN-15-Q4
Description: RF Power Transistor
Min/Mult: 1
Datasheet DC35GN-15-Q4 Data Sheet
EDA/CAD Models

The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN package with high-thermal conductivity to provide superior electrical and thermal performance with excellent reliability & ruggedness.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 50
Maximum Frequency (MHz) 3500
Pout (W) 15
Gain (dB) 18
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 60
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 8.4
Package Name QFN
Package Type Plastic SMT

Change Notice

  PCN_NTDO-19YHXK928

Datasheets

  dc35gn-15-q4_rev_5.0

Stock

 Request Quote for Lead Time

Quote Required


Please notify me when stock becomes available!