E3M0075120J2-TR

Silicon Carbide Power MOSFET
E-Series Automotive
N-Channel Enhancement Mode

• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 4.7mm of creepage distance between drain and source
• High blocking voltage with low On-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Q_rr)
• Halogen free, RoHS compliant
• Automotive qualified (AEC-Q101) and PPAP capable

Benefits

• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency

Applications

• Motor Control
• High Voltage DC/DC converters
• EV Battery Chargers