EAB450M12XM3
Stock Availability: 198
| Manufacturer: | Wolfspeed |
|---|---|
| Mfg #: | EAB450M12XM3 |
| Richardson RFPD #: | EAB450M12XM3 |
| Description: | Silicon Carbide MOSFET Modules |
| Min/Mult: | 1 |
| Datasheet |
EAB450M12XM3 
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| EDA/CAD Models |
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Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized, Half-Bridge Module
Technical Features
- High Power Density Footprint
- High Junction Temperature (175 C) Operation
- Low Inductance (6.7 nH) Design
- Implements Conduction Optimized Third Generation SiC MOSFET Technology
- Silicon Nitride Insulator and Copper Baseplate
Applications
- Motor and Traction Drives
- Vehicle Fast Chargers
- Automotive Test Equipment
System Benefits
- Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design.
- Isolated integrated temperature sensing enables high-level temperature protection.
- Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.
