EAB450M12XM3

Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized, Half-Bridge Module

Technical Features

• High Power Density Footprint
• High Junction Temperature (175 C) Operation
• Low Inductance (6.7 nH) Design
• Implements Conduction Optimized Third Generation SiC MOSFET Technology
• Silicon Nitride Insulator and Copper Baseplate

Applications

• Motor and Traction Drives
• Vehicle Fast Chargers
• Automotive Test Equipment

System Benefits

• Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design.
• Isolated integrated temperature sensing enables high-level temperature protection.
• Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.