ES-CHA8282-99F
Stock Availability: 0
| Manufacturer: | United Monolithic Semiconductors |
|---|---|
| Mfg #: | ES-CHA8282-99F |
| Richardson RFPD #: | ES-CHA8282-99F |
| Description: | mmW Power Amplifier |
| Min/Mult: | 1 |
| Datasheet |
ES-CHA8282-99F |
| EDA/CAD Models |
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The CHA8282-99F is a three-stage GaN High Power Amplifier in the frequency band 27.5-31GHz. This HPA typically provides 10W output power associated to 33% of Power Added Efficiency. The circuit exhibits a typical small signal gain of 27dB. The overall power supply is 22V/300mA. The circuit is dedicated to Satcom and is also well suited for a wide range of microwave and millimetre wave applications and systems. It is developed on a robust GaN-on-SiC HEMT process and is available as a bare die. The input and output are matched to 50 Ohm and integrate ESD RF protection.
Datasheets
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