ES-CHA8282-99F


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Manufacturer: United Monolithic Semiconductors
Mfg #: ES-CHA8282-99F
Richardson RFPD #: ES-CHA8282-99F
Description: mmW Power Amplifier
Min/Mult: 1
Datasheet ES-CHA8282-99F Data Sheet
EDA/CAD Models

The CHA8282-99F is a three-stage GaN High Power Amplifier in the frequency band 27.5-31GHz. This HPA typically provides 10W output power associated to 33% of Power Added Efficiency. The circuit exhibits a typical small signal gain of 27dB. The overall power supply is 22V/300mA. The circuit is dedicated to Satcom and is also well suited for a wide range of microwave and millimetre wave applications and systems. It is developed on a robust GaN-on-SiC HEMT process and is available as a bare die. The input and output are matched to 50 Ohm and integrate ESD RF protection.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 27500
Maximum Frequency (MHz) 31000
Gain (dB) 27
Gain Flatness (dB)
Noise Figure (dB)
P1dB (dBm)
Psat (dBm) 40
Output IP3 (dBm)
Efficiency (%) 33
Package Type Die

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