FGY100T120RWD

Stock Availability: 450

FGY100T120RWD onsemi
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: FGY100T120RWD
Richardson RFPD #: FGY100T120RWD
Description: Power IGBT Transistor
Min/Mult: 1
Datasheet FGY100T120RWD Data Sheet
EDA/CAD Models

1200V, 100A Trench Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging IGBT Power, Co-PAK

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3-lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, data center and high-power switch.

Features
  • Low Conduction Loss and Optimized Switching
  • Maximum Junction Temperature - TJ = 175 C
  • Positive Temperature Coefficient for Easy Parallel Operation
  • High Current Capability
  • 100% of the Parts are Dynamically Tested
  • Short Circuit Rated
  • RoHS Compliant
Applications
  • Motor Control
  • UPS
  • General Application Requiring High Power Switch

Key Attributes Value Search Similar
Configuration Single
Voltage (V) 1200
Current (A) 100
Package Type TO-247-3

Datasheets

  FGY100T120RWD

Stock

 Ready for Immediate Shipment
Stock: 450 Units

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 Pricing in (USD)
Unit Price:
1:  $8.1100
10:  $7.8900
50:  $7.6800
100:  $7.4700
250:  $7.1000
500:  Get Quote