FGY60T120SWD

Stock Availability: 450

FGY60T120SWD onsemi
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: onsemi
Mfg #: FGY60T120SWD
Richardson RFPD #: FGY60T120SWD
Description: Power IGBT Transistor
Min/Mult: 450/1
Datasheet FGY60T120SWD Data Sheet
EDA/CAD Models

1200V, 60A Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3, 1.7 V

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3-lead package, FGY60T120SWD offers the optimum performance with low switching and conduction losses for high-efficiency operations in various applications like Solar, UPS, and ESS.

Features
  • Maximum Junction Temperature - TJ = 175 C
  • Positive Temperature Coefficient for Easy Parallel Operation
  • High Current Capability
  • Smooth and Optimized Switching
  • Low Switching Loss
  • RoHS Compliant
Applications
  • Boost and Inverter in Solar Applications
  • UPS
  • Energy Storage System

Key Attributes Value Search Similar
Configuration Single
Voltage (V) 1200
Current (A) 60
Package Type TO-247-3

Datasheets

  FGY60T120SWD

Stock

 Ready for Immediate Shipment
Stock: 450 Units

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 Pricing in (USD)
Unit Price:
1:  $3.3000