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Product image for reference only. For precise specifications, refer to datasheet.
The KMT32B is a magnetic field sensor based on the anisotropic magneto resistance effect, i.e. it is sensing the magnetic field direction independently on the magnetic field strength for applied field strengths H>25 kA/m. The sensor contains two parallel supplied Wheatstone bridges, which enclose a sensitive angle of 45 degrees.
A rotating magnetic field in the surface parallel to the chip (x-y plane) will therefore deliver two independent sinusoidal output signals, one following a cos(2a) and the second following a sin(2a) function, a being the angle between sensor and field direction
The KMT32B magnetic field sensor is suited for high precision angle measurement applications at a regular field strength of H0 >= 25 kA/m (generated for example with magnet 67.044 from Magnetfabrik Bonn at a distance of 5.2 mm at room temperature). With reduced accuracy, the sensor KMT32B may be used with a field strength of H0 >= 14 kA/m (at room temperature; be aware of the influence of the earth magnetic field!). Most magnets show a decreasing field strength with temperature while the magnetic field direction is unchanged.
TE_KMT32B
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